SNW 2018

June 17-18, 2018.
Honolulu, HI, USA

General Information


Scope


  • Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism
  • Junction and insulator materials and process technology for nanoelectronic devices
  • Techniques for fabrication of nanostructures, including nanometer scale patterning
  • Physics of nanoelectronic devices, e.g., quantum effects, non-equilibrium transport
  • Modeling and simulation of nanoelectronic devices, e.g. including atomistic effects
  • Nanoscale surface, interface, and heterojunction effects in devices
  • Device scaling issues including doping fluctuations and atomic granularity
  • Circuit design issues and novel circuit architectures, including quantum computing, for nanoelectronic devices
  • Optoelectronics using silicon nanostructures
  • Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices
  • Devices for 3D and heterogeneous integration on Silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMS and NEMS, etc.
  • Novel transistors based on two dimensional materials, e.g., MoS2, WS2, etc.
  • Novel non-volatile memories, e.g., MRAM, RRAM, PCM, etc.
  • Integrated energy harvesting and energy storage based on new material and structures
  • Reliability and Characterization for various nanoelectronic devices.
  • Environmental devices which contribute to low-carbon society (wireless sensors, energy harvesters, steep slope devices, etc.)

Venue


Hilton Hawaiian Village, Honolulu, HI USA

Hilton Hawaiian Village Save as PDF
Meeting Rooms

Located in the 2nd floor, entering Hilton on the right (next to Starbuck).

mid-pacific conference center
Mid-Pacific Conference Center
Milton Hawaiian Village
  • Registration desk open: starting from 6/17 am 7:30
  • Coral 3: Oral presentation
  • Coral Lounge: Poster

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